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2 ghz to 6 ghz, 45 dbm power amplifier data sheet HMC7885 rev. 0 document feedback information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 2017 analog devices, inc. a ll rights reserved. technical support www.analog.com features 2 ghz to 6 ghz 21 db typical s mall s ignal g ain 45 dbm typical s aturated rf o utput p ower (p out ) 18- l ead , h ermetically s ealed m odule ? 30c to + 60 c o perating t emperature applications test and m easurement e quipment communications e lectronic warfare (ew ) military t raveling wave tube (twt ) r eplacement s satcom commercial and m ilitary r adar s general description the HMC7885 is a 32 w g allium n itride (gan) , monolithic microwave integrated circuit (mmic) p ower a mplifier (pa) module that operates between 2 ghz and 6 ghz, and is provided in an 18 - lead hermeticall y sealed module . the amplifier typically provides 21 db of small signal gain and 45 dbm of saturated radio frequency ( rf ) output power. the amplifier draws 22 00 ma of quiescent current (i dd ) from a 28 v dc supply. the rf input and output are dc blocked and matched to 50 ? for ease of use. functional block dia gram 12967-001 gnd dc 10 vdd2 11 nic 12 gnd rfout 13 rfout 14 gnd rfout 15 gnd dc 16 vdd1 17 nic 18 vg2 9 gnd dc 8 vg2 7 gnd rfin 6 rfin 5 gnd rfin 4 vg1 3 gnd dc 2 vg1 1 figure 1.
HMC7885 data sheet rev. 0 | page 2 of 11 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 general descript ion ......................................................................... 1 functional block diagram .............................................................. 1 revision history ............................................................................... 2 specificatio ns ..................................................................................... 3 absolute maximum ratings ............................................................ 4 esd caution .................................................................................. 4 pin configuration and function descriptions ..............................5 typical performance characteristics ..............................................6 appl ications information .................................................................9 evaluation board assembly .......................................................... 10 bill of materials ........................................................................... 10 outline di mensions ....................................................................... 11 ordering guide .......................................................................... 11 revision history 1 / 201 7 revision 0 : initial version
data sheet HMC7885 rev. 0 | page 3 of 11 specifications vdd = v dd 1 = v dd 2 = 28 v dc , v gg = v g 1 = v g 2, t a = 2 5c, unless otherwise noted. adjust v gg between ? 5 v to 0 v to achieve a total i dd = 2200 ma typical (1100 ma per side) . table 1 . parameter min typ max unit test conditions/comments frequency range 2 6 ghz gain small signal gain 21 db power gain 17 db gain flatness 2 db voltage standing wave ratio (vswr) input 2:1 output 2:1 rf output saturated output power (p sat ) 45 dbm 5 db compression with continuous wave (cw) input output power for 1 db compression (p1db) 39 dbm output third - order intercept (ip3) 53 dbm linear power output 34 dbm power added efficiency (pae) 25 % at p sat
HMC7885 data sheet rev. 0 | page 4 of 11 absolute maximum rat ings table 2 . parameter rating drain bias voltage ( vdd 1 , vdd2 ) 3 2 v gate bias voltage ( vg1 , vg2 ) ? 8 v dc to 0 v dc rf input (rfin) power 3 6 dbm operating temper ature 1 ? 30 c to +60c junction temperature (t j ) 225c storage temperature 2 ? 65 c to +1 50c 1 for operation with a c ontinuous wave input. 2 this device is not surface mountable and is not intended nor suitable for use in a solder reflow process. this device must not be exposed to ambient temperatures above 15 0 c. stresses at or above those listed under absolute maximum ratings may cause permanent damage to the product. this is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specif ication is not implied. operation beyond the maximum operating conditions for extended periods may affect product reliability. esd caution
data sheet HMC7885 rev. 0 | page 5 of 11 pin configuration an d function descripti ons 12967-002 HMC7885fh18 vg1 (1) gnd dc (2) vg1 (3) gnd rfin (4) rfin (5) gnd rfin (6) vg2 (7) gnd dc (8) vg2 (9) (18) nic notes 1. the package base must be mounted to a suitable heat sink for the rf and dc ground. it is recommended to use 0-80 socket cap screws. (17) vdd1 (16) gnd dc (15) gnd rfout (14) rfout (13) gnd rfout (12) nic (11) vdd2 (10) gnd dc figure 2 . pin configuration table 3 . pin function descriptions pin o. mnemonic description 1 vg1 supply v oltage for mmic 1 g ates. t his pin is t ypically ? 1.3 v dc. pin 1 is c onnected internally to pin 3. 2 gnd dc power s upply g round. 3 vg1 supply v oltage for mmic 1 gates . this pin is typically ?1.3 v dc. pin 3 is c onnected internally to pin 1. 4 gnd rfin rf i nput g round. 5 rfin rf input . this pin is dc - coupled and matched to 50 ? . 6 gnd rfin rf i nput g round. 7 vg2 supply v oltage for mmic 2 gates . this pin is typically ?1.3 v dc. pin 7 is c onnected internally to pin 9. 8 gnd dc power s upply g round. 9 vg2 supply v oltage for mmic 2 gates . this pin is typically ?1.3 v dc. pin 9 is c onnected internally to pin 7. 10 gnd dc power s upply g round. 11 vdd2 supply v oltage for mmic 2 d rains. 12 nic not internally connected . h owever , this pin can be connected externally to the rf and/or dc ground. 13 gnd rfout rf o utput g round. 14 rfout rf output. this pin is ac - coupled and matched to 50 ? . 15 gnd rfout rf o utput g round. 16 gnd dc power s upply g round. 17 vdd1 supply v oltage for mmic 1 d rains. 18 nic not internally connected . h owever , this pin can be connected externally to the rf and/or dc ground. package base gnd the package base must be mounted to a suitable heat sink for the rf and dc ground. it is r ecommended to us e 0 - 80 socket cap screws.
HMC7885 data sheet rev. 0 | page 6 of 11 typical performance characteristics 12967-003 gain (db) frequency (ghz) ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 30 0 1 2 3 4 5 6 7 8 gain input return loss output return loss figure 3. gain and input/output return loss vs. frequency 12967-004 return loss (db) frequency (ghz) ?60 ?50 ?40 ?30 ?20 ?10 0 0 1 2 3 4 5 6 7 8 +60c +25c ?30c figure 4. output return loss vs. frequency at various temperature s 12967-005 return loss (db) frequency (ghz) ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 0 1 2 3 4 5 6 7 8 +25c +60c ?30c figure 5. input return loss vs. frequency at various temperatures 12967-006 gain (db) frequency (ghz) ?20 ?15 ?10 ?5 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 +25 c +60 c ?30 c figure 6. gain vs. frequency at various temperatures 12967-007 p out (dbm) frequency (ghz) 25 30 35 40 45 50 0 1 2 3 4 5 6 7 p1db p5db p sat figure 7. p out vs. frequency for p1db, output power for 5 db compression ( p5db ) , and p sat 12967-015 p1db (dbm) frequency (ghz) 35 36 37 38 39 40 41 42 0 1 2 3 4 5 6 7 +60 c +25 c ?30 c figure 8 . p1db vs. frequency at various temperatures
data sheet HMC7885 rev. 0 | page 7 of 11 12967-008 p5db (dbm) frequency (ghz) 42.0 42.5 43.0 43.5 44.0 44.5 45.0 45.5 46.0 46.5 47.0 0 1 2 3 4 5 6 7 +60 c +25 c ?30 c figure 9. p 5db vs. frequency at various temperatures 12967-009 p sat (dbm) frequency (ghz) 45.0 45.5 46.0 46.5 47.0 47.5 48.0 0 1 2 3 4 5 6 7 +25c +60c ?30c figure 10 . p sat vs. frequency at various temperatures 12967-0 1 1 power gain (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 p5db p sat figure 11 . power gain vs. frequency for p5db and p sat 12967-013 isolation (db) frequency (ghz) ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 0 1 2 3 4 5 6 7 8 +25c +60c ?30c figure 12 . reverse isolation vs. frequency at various temperatures
HMC7885 data sheet rev. 0 | page 8 of 11 12967-010 p out (dbm), gain (db), pae (%) i dd (ma) p in (dbm) 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 p out gain i dd pae figure 13 . power compression at 2 ghz 12967-012 p out (dbm), gain (db), pae (%) i dd (ma) p in (dbm) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 p out gain i dd pae figure 14 . power compression at 4 ghz 12967-014 p out (dbm), gain (db), pae (%) i dd (ma) p in (dbm) 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 p out gain i dd pae figure 15 . power compression at 6 ghz
data sheet HMC7885 rev. 0 | page 9 of 11 applications informa tion to turn on the a mplifier , complete the following steps : 1. set v g 1 and v g 2 to ? 5 v. 2. set v dd 1 and v dd 2 to +28 v. 3. ramp the gate voltage until the quiescent current (i dd ) = 1100 ma per side (2200 ma total) . 4. apply the rf input power. to turn off the a mplifier , complete the following steps : 1. remove the rf input power. 2. set v g 1 and v g 2 to ? 5 v. 3. set v dd 1 and v dd 2 to 0 v. 4. set v g 1 and v g 2 to 0 v.
HMC7885 data sheet rev. 0 | page 10 of 11 evaluation board assembly 12967-001 figure 16. evaluation fixture bill of materials use rf circuit design techniques for the circuit board used in the application. provide 50 impedance for the signal lines, and connect the package ground leads and package base directly to the ground plane. dc bias voltages can be applied through either j3 or j4. the evaluation board shown is available from analog devices, inc., upon request. table 4. bill of materials for evaluation board assembly ev1HMC7885fh18 item description j1, j2 sma jack j3, j4 dc, 0.1 terminal strip jp1 to jp4 6.9 mm, smt jumper c1 to c6 1 f capacitors, 0603 package c7 to c10 10 f capacitor, 1210 package u1 HMC7885fh18 pcb 600-00941-00 evaluation printed circuit board (pcb); circuit board material: rogers 4350b
data sheet HMC7885 rev. 0 | page 11 of 11 outline dimensions 01-20-2017-b pkg-000000 top view side view end view (measured at flange tabs) (measured at package center) 1 910 18 0.980 0.071 1.051 0.080 0.074 0.024 1.346 0.909 0.441 0.299 0.157 0.069 0.148 0.472 0.254 r 0.51 (4 ) 0.012 0.010 0.008 0.050 0.039 0.028 0.008 0.006 0.005 0.090 0.085 0.079 0.073 0.065 0.057 0.162 0.154 0.146 0.047 0.039 0.031 figure 17. 18-lead multichip module hermetic ceramic/metal package [cm] (mc-18-1) dimensions shown in inches ordering guide model 1 temperature range package description package option HMC7885fh18 C30c to +60c 18-lead multichip modu le hermetic ceramic/metal package [cm] mc-18-1 ev1HMC7885fh18 evaluation board 1 the HMC7885fh18 is an rohs-compliant part. ?2017 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. d12967-0-1/17(0)

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